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1

Erratum: Admittance studies of surface quantization in [100]-oriented Si metal-oxide-semiconductor field-effect transistors

Voshchenkov, A. M., Zemel, J. N.

Journal:

Physical Review B

Year:

1975

Language:

english

File:

PDF, 59 KB

english, 1975

2

Suppression of lateral autodoping from arsenic buried layer by selective epitaxy capping

Chiu, T.-Y., Lee, K.F., Lau, M.Y., Finegan, S.N., Morris, M.D., Voshchenkov, A.M.

Journal:

IEEE Electron Device Letters

Year:

1990

Language:

english

File:

PDF, 219 KB

english, 1990

3

Admittance studies of surface quantization in [100]-oriented Si metal-oxide-semiconductor field-effect transistors

Voshchenkov, A. M., Zemel, J. N.

Journal:

Physical Review B

Year:

1974

Language:

english

File:

PDF, 520 KB

english, 1974

4

IIIB-5 a technique for rapidly alternating boron and arsenic doping in ion-implanted silicon molecular beam epitaxy

McFee, J.H., Swartz, R.G., Voshchenkov, A.M., Feldman, L.C., Ota, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1981

Language:

english

File:

PDF, 183 KB

english, 1981

5

In-situ low energy BF2+ion doping for silicon molecular beam epitaxy

Swartz, R.G., McFee, J.H., Voshchenkov, A.M., Finegan, S.N., Archer, V.D., O'Day, P.J.

Journal:

IEEE Electron Device Letters

Year:

1982

Language:

english

File:

PDF, 415 KB

english, 1982

6

A 5-Gb/s decision circuit fabricated in a 1.5- mu m super-self-aligned silicon bipolar IC technology

Swartz, R.G., Archer, V.D., Chiu, T.Y., Ota, Y., Voshchenkov, A.M., Long, T., Moerschel, K., Possanza, W.

Journal:

IEEE Microwave and Guided Wave Letters

Year:

1991

File:

PDF, 278 KB

1991

7

IIIB-4 a super self-aligned high-speed CMOS technology

Tzu-Yin Chiu, Voshchenkov, A.M., Chin, G.M., Lee, K.F., Hanson, R.C., Lau, M.Y., Soo, D.C., Morris, M.D., Archer, V.D., Finegan, S.N.

Journal:

IEEE Transactions on Electron Devices

Year:

1987

Language:

english

File:

PDF, 325 KB

english, 1987

8

[IEEE 1992 Symposium on VLSI Technology Digest of Technical Papers - Seattle, WA, USA (2-4 June 1992)] 1992 Symposium on VLSI Technology Digest of Technical Papers - An ultra high speed ECL-bipolar CMOS technology with silicon fillet self-aligned contacts

Liu, T.M., Chin, G.M., Morris, M.D., Jeon, D.Y., Archer, V.D., Kim, H.H., Cerullo, M., Lee, K.F., Sung, J.M., Lau, K., Chiu, T.Y., Voshchenkov, A.M., Swartz, R.G.

Year:

1992

Language:

english

File:

PDF, 188 KB

english, 1992

9

[Institute of Electrical and Electronics Engineers 1985 IEEE International Solid-State Circuits Conference - New York, NY, USA (February 1985)] 1985 IEEE International Solid-State Circuits Conference. Digest of Technical Papers - A 750MS/s NMOS latched comparator

Soo, D., Voshchenkov, A., Chin, G., Archer, V., Lau, M., Morris, M., Ko, P., Meyer, R., Wooley, B.

Year:

1985

Language:

english

File:

PDF, 493 KB

english, 1985

10

Preliminary observation of 1-D effects in narrow Si Mosfet structures

W.J. Skocpol, A.M. Voshchenkov, R.E. Howard, E.L. Hu, L.D. Jackel, R.W. Epworth, L.A. Fetter, P. Grabbe, D.M. Tennant

Journal:

Year:

1982

Language:

english

File:

PDF, 201 KB

english, 1982

11

[Institute of Electrical and Electronics Engineers 1986 IEEE International Solid-State Circuits Conference - Anaheim, CA, USA (February 1986)] 1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers - A 2Gb/s silicon NMOS laser driver

Swartz, R., Voshchenkov, A., Chin, G., Finegan, S., Lau, M., Morris, M., Archer, V., Ko, P.

Year:

1986

Language:

english

File:

PDF, 615 KB

english, 1986

12

FUNDAMENTALS OF PLASMA ETCHING FOR SILICON TECHNOLOGY (PART 1)

VOSHCHENKOV, ALEXANDER M.

Journal:

International Journal of High Speed Electronics and Systems

Year:

1990

Language:

english

File:

PDF, 2.35 MB

english, 1990

13

A high-speed P-channel random access 1024-bit memory made with electron lithography

Henderson, R.C., Pease, R.F., Voshchenkov, A.M., Helm, R.F., Wadsack, R.L.

Journal:

IEEE Journal of Solid-State Circuits

Year:

1975

Language:

english

File:

PDF, 909 KB

english, 1975

14

Applications of the electron beam exposure system

Pease, R.F.W., Ballantyne, J.P., Henderson, R.C., Voshchenkov, A.M., Yau, L.D.

Journal:

IEEE Transactions on Electron Devices

Year:

1975

Language:

english

File:

PDF, 1.09 MB

english, 1975

15

Submicron resolution photolithography by spectral shaping

Voshchenkov, A.M., Hanson, R.C.

Journal:

IEEE Electron Device Letters

Year:

1982

Language:

english

File:

PDF, 366 KB

english, 1982

16

Wide-band, low-noise, matched-impedance amplifiers in submicrometer MOS technology

Toh, K.-Y., Meyer, R.G., Soo, D.C., Chin, G.M., Voshchenkov, A.M.

Journal:

IEEE Journal of Solid-State Circuits

Year:

1987

Language:

english

File:

PDF, 1.64 MB

english, 1987

17

Plasma etching: An enabling technology for gigahertz silicon integrated circuits

A. M. Voshchenkov

Year:

1993

Language:

english

File:

PDF, 1.48 MB

english, 1993

18

[IRE 1983 International Electron Devices Meeting - ()] 1983 International Electron Devices Meeting - SiGMOS—A silicon gigabit/s NMOS technology

Ko, P.K., Voshchenkov, A.M., Hanson, R.C., Grabbe, P., Tennant, D.M., Archer, V.D., Chin, G.M., Lau, M., Soo, D.C., Wooley, B.A.

Year:

1983

Language:

english

File:

PDF, 191 KB

english, 1983

19

[IEEE 1993 International Symposium on VLSI Technology, Systems, and Applications Technical Papers - Taipei, Taiwan (12-14 May 1993)] 1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers - Performance optimization of a high speed super self-aligned BiCMOS technology

Liu, T.M., Chin, G.M., Morris, M.D., Jeon, D.Y., Johnson, R.W., Archer, V.D., Tarsia, M.J., Kim, H.H., Cerullo, M., Lee, K.F., Sung, J.M., Lau, K., Feuer, M.D., Voshchenkov, A.M., Swartz, R.G.

Year:

1993

Language:

english

File:

PDF, 292 KB

english, 1993

20

An ultra-high-speed ECL-BiCMOS technology with silicon fillet self-aligned contacts

Liu, T.M., Chin, G.M., Jeon, D.Y., Morris, M.D., Archer, V.D., III, Johnson, R.W., Tarsia, M., Kim, H.H., Cerullo, M., Lee, K.F., Sung, J.J., Kei-Shun Lau, Tzu-Yin Chiu, Voshchenkov, A.M., Swartz, R.G

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 952 KB

english, 1994

21

[IEEE 2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices (EDM) - Novosibirsk, Russia (2009.07.1-2009.07.6)] 2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices - The electrical properties of MOS-structures with silicon nanoballs incrusted in SiO2 layer

Voshchenkov, Artyom A., Efremov, Mikhail D., Antonenko, Alexander H., Kamayev, Gennady H., Volodin, Vladimir A., Arzhannikova, Sofia A., Vishnyakov, Aleksey V., Marin, Denis V., Gismatulin, Andrey A.

Year:

2009

Language:

english

File:

PDF, 4.14 MB

english, 2009

22

An integrated circuit for multiplexing and driving injection lasers

Swartz, R.G., Wooley, B.A., Voshchenkov, A.M., Archer, V.D., Chin, G.M.

Journal:

IEEE Journal of Solid-State Circuits

Year:

1982

Language:

english

File:

PDF, 1.39 MB

english, 1982

23

[IEEE Proceedings of IEEE International Electron Devices Meeting - San Francisco, CA, USA (1989.12.3-1989.12.6)] International Technical Digest on Electron Devices Meeting - 0.1 mu m p-channel MOSFETs with 51 GHz f/sub T/

Lee,, Yan,, Jeon,, Kim,, Tennant,, Westerwick,, Early,, Chin,, Morris,, Johnson,, Liu,, Kistler,, Voshchenkov,, Swart,, Ourmazd,

Year:

1992

Language:

english

File:

PDF, 165 KB

english, 1992

24

[IRE 1974 International Electron Devices Meeting (IEDM) - Washigton, DC, USA (1974.12.9-1974.12.11)] 1974 International Electron Devices Meeting (IEDM) - Applications of the electron beam exposure system (EBES)

Pease, R.F.W., Ballantyne, J.P., Henderson, R.C., Voshchenkov, A.M., Yau, L.D.

Year:

1974

Language:

english

File:

PDF, 1.41 MB

english, 1974

25

[IEEE Proceedings of IEEE International Electron Devices Meeting - San Francisco, CA, USA (1989.12.3-1989.12.6)] International Technical Digest on Electron Devices Meeting - A half-micron super self-aligned BiCMOS technology for high speed applications

Liu,, Chin,, Jeon,, Morris,, Archer,, Kim,, Cerullo,, Lee,, Sung,, Lau,, Chiu,, Voshchenkov,, Swartz,

Year:

1992

Language:

english

File:

PDF, 329 KB

english, 1992

26

[IEEE 1982 IEEE International Solid-State Circuits Conference - San Francisco, CA, USA (1982.02.10-1982.02.12)] 1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers - A monolithic laser driver for optical communications

Swartz, R., Wooley, B., Voshchenkov, A., Archer, V., Chin, G.

Year:

1982

Language:

english

File:

PDF, 312 KB

english, 1982

27

Digital NMOS test circuits fabricated in silicon MBE

Swartz, R.G., Chin, G.M., Voshchenkov, A.M., Ko, P., Wooley, B.A., Finegan, S.N., Bosworth, R.H.

Journal:

IEEE Electron Device Letters

Year:

1984

Language:

english

File:

PDF, 318 KB

english, 1984

28

Nonoverlapping super self-aligned device structure for high-performance VLSI

Chiu, T.-Y., Chin, G.M., Lau, M.Y., Hanson, R.C., Morris, M.D., Lee, K.F., Voshchenkov, A.M., Swartz, R.G., Archer, V.D., Liu, M.T.Y., Finegan, S.N., Feuer, M.D.

Journal:

IEEE Electron Device Letters

Year:

1990

Language:

english

File:

PDF, 267 KB

english, 1990

29

[IRE 1987 International Electron Devices Meeting - ()] 1987 International Electron Devices Meeting - A high speed super self-aligned bipolar-CMOS technology

Chiu, T., Chin, G.M., Lau, M.Y., Hanson, R.C., Morris, M.D., Lee, K.F., Voshchenkov, A.M., Swartz, R.G., Archer, V.D., Finegan, S.N.

Year:

1987

Language:

english

File:

PDF, 303 KB

english, 1987

30

Preliminary observation of 1-D effects in narrow Si MOSFET structures

W.J. Skocpol, A.M. Voshchenkov, R.E. Howard, E.L. Hu, L.D. Jackel, R.W. Epworth, L.A. Fetter, P. Grabbe, D.M. Tennant

Journal:

Year:

1982

Language:

english

File:

PDF, 236 KB

english, 1982

31

[IRE 1973 International Electron Devices Meeting - ()] 1973 International Electron Devices Meeting - A high-speed p-channel random access 1024-bit memory made with electron lithography

Henderson, R.C., Pease, R.F.W., Voshchenkov, A.M., Mallery, P., Wadsack, R.L.

Year:

1973

Language:

english

File:

PDF, 256 KB

english, 1973

32

PLASMA ETCHING PROCESSES FOR GIGAHERTZ SILICON INTEGRATED CIRCUITS (Part 2)

VOSHCHENKOV, A.M.

Journal:

International Journal of High Speed Electronics and Systems

Year:

1991

Language:

english

File:

PDF, 2.09 MB

english, 1991

33

[IEEE International Symposium on VLSI Technology, Systems and Applications - Taipei, Taiwan (17-19 May 1989)] International Symposium on VLSI Technology, Systems and Applications - 1.5 mu m NOVA BiCMOS for Gb/s system application

Chiu, T.-Y., Chin, G.M., Lau, M.Y., Hanson, R.C., Morris, M.D., Lee, K.F., Voshchenkov, A.M., Swartz, R.G., Archer, V.D., Liu, M.T.Y., Finegan, S.N., Feuer, M.D.

Year:

1989

Language:

english

File:

PDF, 340 KB

english, 1989

34

[Institute of Electrical and Electronics Engineers 1987 IEEE International Solid-State Circuits Conference - New York, NY, USA (February 1987)] 1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers - A matched impedance NMOS amplifier

Kai-Yup Toh,, Meyer, R., Soo, D., Chin, G., Voshchenkov, A.

Year:

1987

Language:

english

File:

PDF, 620 KB

english, 1987

35

[IEEE Technical Digest., International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1988)] Technical Digest., International Electron Devices Meeting - Non-overlapping super self-aligned BiCMOS with 87 ps low power ECL

Chiu, T.-Y., Chin, G.M., Lau, M.Y., Hanson, R.C., Morris, M.D., Lee, K.F., Voshchenkov, A.M., Swatrz, R.G., Archer, V.D., Liu, M.T.Y., Finegan, S.N., Feuer, M.D.

Year:

1988

File:

PDF, 307 KB

1988

36

Submicron resolution deep UV photolithography

Voshchenkov, A.M., Herrmann, H.

Journal:

Electronics Letters

Year:

1981

Language:

english

File:

PDF, 368 KB

english, 1981

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